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SS8550 PNP Transistor - SOT-23 SMD Package (Pack of 10)
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SS8550 PNP Transistor - SOT-23 SMD Package (Pack of 10)

SS8550 PNP Transistor - SOT-23 SMD Package (Pack of 10)

The SS8550 PNP Transistor - SOT-23 SMD Package is a high-gain, general-purpose transistor designed for medium current and low-voltage switching applications. With low saturation voltage and high current handling capacity, it ensures efficient performance in compact PCB layouts. Ideal for audio amplification, driver stages, and complementary use with NPN SS8050 transistors.

CLICK HERE FOR DATASHEET

Features:

  1. High collector current capability up to -1.5A
  2. Low collector-emitter saturation voltage for efficient switching
  3. High DC current gain ensuring stable amplification
  4. Complementary to SS8050 NPN transistor
  5. Compact SOT-23 surface-mount design for space-saving applications

Specifications:

  • Collector-Base Voltage (VCBO): -40V
  • Collector-Emitter Voltage (VCEO): -25V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -1.5A
  • Collector Power Dissipation (PCM) at 25°C: 0.3W 
  • Junction Temperature (TJ): -55°C to +150°C
  • Storage Temperature (TSTG): -55°C to +150°C
  • Collector-Base Breakdown Voltage (V(BR)CBO): -40V
  • Collector-Emitter Breakdown Voltage (V(BR)CEO): -25V
  • Emitter-Base Breakdown Voltage (V(BR)EBO): -5V
  • Collector Cutoff Current (ICBO): -0.1µA
  • Collector Cutoff Current (ICEO): -0.1µA
  • Emitter Cutoff Current (IEBO): -0.1µA
  • DC Current Gain (hFE1) at -100mA: 120 to 350
  • DC Current Gain (hFE2) at -800mA: Min 40
  • Collector-Emitter Saturation Voltage (VCE(sat)): -0.5V
  • Base-Emitter Saturation Voltage (VBE(sat)): -1.2V
  • Transition Frequency (fT): 100MHz 

Package Includes:

10 × SS8550 PNP Transistor - SOT-23 SMD Package

$0.06

Original: $0.19

-68%
SS8550 PNP Transistor - SOT-23 SMD Package (Pack of 10)

$0.19

$0.06

SS8550 PNP Transistor - SOT-23 SMD Package (Pack of 10)

The SS8550 PNP Transistor - SOT-23 SMD Package is a high-gain, general-purpose transistor designed for medium current and low-voltage switching applications. With low saturation voltage and high current handling capacity, it ensures efficient performance in compact PCB layouts. Ideal for audio amplification, driver stages, and complementary use with NPN SS8050 transistors.

CLICK HERE FOR DATASHEET

Features:

  1. High collector current capability up to -1.5A
  2. Low collector-emitter saturation voltage for efficient switching
  3. High DC current gain ensuring stable amplification
  4. Complementary to SS8050 NPN transistor
  5. Compact SOT-23 surface-mount design for space-saving applications

Specifications:

  • Collector-Base Voltage (VCBO): -40V
  • Collector-Emitter Voltage (VCEO): -25V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -1.5A
  • Collector Power Dissipation (PCM) at 25°C: 0.3W 
  • Junction Temperature (TJ): -55°C to +150°C
  • Storage Temperature (TSTG): -55°C to +150°C
  • Collector-Base Breakdown Voltage (V(BR)CBO): -40V
  • Collector-Emitter Breakdown Voltage (V(BR)CEO): -25V
  • Emitter-Base Breakdown Voltage (V(BR)EBO): -5V
  • Collector Cutoff Current (ICBO): -0.1µA
  • Collector Cutoff Current (ICEO): -0.1µA
  • Emitter Cutoff Current (IEBO): -0.1µA
  • DC Current Gain (hFE1) at -100mA: 120 to 350
  • DC Current Gain (hFE2) at -800mA: Min 40
  • Collector-Emitter Saturation Voltage (VCE(sat)): -0.5V
  • Base-Emitter Saturation Voltage (VBE(sat)): -1.2V
  • Transition Frequency (fT): 100MHz 

Package Includes:

10 × SS8550 PNP Transistor - SOT-23 SMD Package

Product Information

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Description

The SS8550 PNP Transistor - SOT-23 SMD Package is a high-gain, general-purpose transistor designed for medium current and low-voltage switching applications. With low saturation voltage and high current handling capacity, it ensures efficient performance in compact PCB layouts. Ideal for audio amplification, driver stages, and complementary use with NPN SS8050 transistors.

CLICK HERE FOR DATASHEET

Features:

  1. High collector current capability up to -1.5A
  2. Low collector-emitter saturation voltage for efficient switching
  3. High DC current gain ensuring stable amplification
  4. Complementary to SS8050 NPN transistor
  5. Compact SOT-23 surface-mount design for space-saving applications

Specifications:

  • Collector-Base Voltage (VCBO): -40V
  • Collector-Emitter Voltage (VCEO): -25V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -1.5A
  • Collector Power Dissipation (PCM) at 25°C: 0.3W 
  • Junction Temperature (TJ): -55°C to +150°C
  • Storage Temperature (TSTG): -55°C to +150°C
  • Collector-Base Breakdown Voltage (V(BR)CBO): -40V
  • Collector-Emitter Breakdown Voltage (V(BR)CEO): -25V
  • Emitter-Base Breakdown Voltage (V(BR)EBO): -5V
  • Collector Cutoff Current (ICBO): -0.1µA
  • Collector Cutoff Current (ICEO): -0.1µA
  • Emitter Cutoff Current (IEBO): -0.1µA
  • DC Current Gain (hFE1) at -100mA: 120 to 350
  • DC Current Gain (hFE2) at -800mA: Min 40
  • Collector-Emitter Saturation Voltage (VCE(sat)): -0.5V
  • Base-Emitter Saturation Voltage (VBE(sat)): -1.2V
  • Transition Frequency (fT): 100MHz 

Package Includes:

10 × SS8550 PNP Transistor - SOT-23 SMD Package