2N7000 N-Channel MOSFET
The 2N7000 is a low-power N-channel MOSFET designed for switching and amplification applications. With a 60V drain-source voltage and 200mA continuous current rating, it is widely used in low-power switching circuits, logic-level interfaces, and signal processing. Its compact TO-92 package makes it ideal for space-constrained designs.
Product highlights:
| Type | MOSFET Transistor |
|---|---|
| Working principle | N-channel |
| Pin configuration | G = Gate, D = Drain, S = Source. The symbol doesn't always show the internal diode formed between the substrate and the source/drain/channel. |
| Electronic symbol | |
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Advantages:
- the high input impedance of the insulated gate means almost no gate current is required
- consequently, no current-limiting resistor is required in the gate input
- MOSFETs, unlike PN junction devices (such as LEDs), can be paralleled because resistance increases with temperature, although the quality of this load balance is largely dependent on the internal chemistry of each individual MOSFET in the circuit
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2N7000 N-Channel MOSFET
The 2N7000 is a low-power N-channel MOSFET designed for switching and amplification applications. With a 60V drain-source voltage and 200mA continuous current rating, it is widely used in low-power switching circuits, logic-level interfaces, and signal processing. Its compact TO-92 package makes it ideal for space-constrained designs.
Product highlights:
| Type | MOSFET Transistor |
|---|---|
| Working principle | N-channel |
| Pin configuration | G = Gate, D = Drain, S = Source. The symbol doesn't always show the internal diode formed between the substrate and the source/drain/channel. |
| Electronic symbol | |
|
|
Advantages:
- the high input impedance of the insulated gate means almost no gate current is required
- consequently, no current-limiting resistor is required in the gate input
- MOSFETs, unlike PN junction devices (such as LEDs), can be paralleled because resistance increases with temperature, although the quality of this load balance is largely dependent on the internal chemistry of each individual MOSFET in the circuit
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Description
The 2N7000 is a low-power N-channel MOSFET designed for switching and amplification applications. With a 60V drain-source voltage and 200mA continuous current rating, it is widely used in low-power switching circuits, logic-level interfaces, and signal processing. Its compact TO-92 package makes it ideal for space-constrained designs.
Product highlights:
| Type | MOSFET Transistor |
|---|---|
| Working principle | N-channel |
| Pin configuration | G = Gate, D = Drain, S = Source. The symbol doesn't always show the internal diode formed between the substrate and the source/drain/channel. |
| Electronic symbol | |
|
|
Advantages:
- the high input impedance of the insulated gate means almost no gate current is required
- consequently, no current-limiting resistor is required in the gate input
- MOSFETs, unlike PN junction devices (such as LEDs), can be paralleled because resistance increases with temperature, although the quality of this load balance is largely dependent on the internal chemistry of each individual MOSFET in the circuit
